LOW-ENERGY LITHOGRAPHY - ENERGY CONTROL AND VARIABLE-ENERGY EXPOSURE

被引：19

作者：

BRUNGER, W

KLEY, EB

SCHNABEL, C

STOLBERG, I

ZIERBOCK, M

PLONTKE, R

机构：

[1] JENOPTIK Technologie GmbH

[2] Fraunhofer-Institute for Silicon Technology, D-14199 Berlin

[3] Institut für Angewandte Physik, Friedrich-Schiller-Universität Jena, D-07743 Jena, Max-Wien-Platz

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 27卷 / 1-4期

关键词：

Algorithms - Electrons - Field emission cathodes - Integrated circuit layout - Lenses - Photoresists - Substrates - Three dimensional;

D O I：

10.1016/0167-9317(94)00073-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The paper describes an electron beam lithography system for structures as small as 10nm and pattern samples produced on it. The system works with electron energies from 20keV down to 1keV. A special objective lens allows to realize probes of 5nm diameter for the lower energy range. Depending on how much energy is applied, the electrons will penetrate more or less deeply into the material. This may be used to create three-dimensional profiles in the resist. Provided in the system is a quasi-continuous path control to generate protracted curved structures with minimum edge roughness. Automatic marker detection algorithms and metric coordinate-control facilities enable the use of mix-and-match technologies.

引用

页码：135 / 138

页数：4