NEAR-BAND-EDGE PHOTOLUMINESCENCE IN RELAXED SI1-XGEX LAYERS

被引：26

作者：

TILLY, LP ^{[1
]}

MOONEY, PM ^{[1
]}

CHU, JO ^{[1
]}

LEGOUES, FK ^{[1
]}

机构：

[1] LUND UNIV,DEPT SOLID STATE PHYS,S-22100 LUND,SWEDEN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 17期

关键词：

D O I：

10.1063/1.114617

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Near band-gap photoluminescence was observed at low temperatures from relaxed Si1-xGex layers with 0.17<x<0.32 grown on Si(001) by ultrahigh vacuum chemical vapor deposition. The luminescence from undoped samples was dominated at low temperature and low excitation densities by recombination of excitons bound to alloy fluctuations exhibiting the smallest full width at half-maximum, 2.44 meV, reported for relaxed epitaxial Si1-xGex layers. Excitons bound to phosphorous and boron were also observed as was free exciton recombination. (C) 1995 American Institute of Physics.

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页码：2488 / 2490

页数：3

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