4H-SIC MESFET WITH 2.8-W/MM POWER-DENSITY AT 1.8-GHZ

被引：67

作者：

WEITZEL, CE ^{[1
]}

PALMOUR, JW ^{[1
]}

CARTER, CH ^{[1
]}

NORDQUIST, KJ ^{[1
]}

机构：

[1] CREE RES, DURHAM, NC 27713 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 10期

关键词：

D O I：

10.1109/55.320983

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

MESFET's were fabricated using 4H-SiC substrates and epitaxy. The D.C., S-parameter, and output power characteristics of the 0.7 mu m gate length, 332 mu m gate width MESFET's were measured. At v(ds)=25 V the current density was about 300 mA/mm and the maximum transconductance was in the range of 38-42 mS/mm. The device had 9.3 dB gain at 5 GHz and f(max)=12.9 GHz. At V-ds=54 V the power density was 2.8 W/mm with a power added efficiency=12.7%.

引用

页码：406 / 408

页数：3