PREPARATION AND PROPERTIES OF ALL HIGH-TC SNS-TYPE EDGE DC SQUIDS

被引:39
作者
GAO, J
AARNINK, WAM
GERRITSMA, GJ
VELDHUIS, D
ROGALLA, H
机构
[1] University of Twente, Faculty of Applied Physics, 7500, AE Enschede
关键词
D O I
10.1109/20.133856
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High-T(c)SNS-type Josephson junctions and dc SQUIDs were successfully fabricated using hetero-epitaxially grown multilayers of YBa2Cu3O(x) and PrBa2Cu3O(x). These layers are c-axis oriented and hence edges of the multilayers give rise to a current flow in the ab-plane between the electrodes of a Josephson junction. The necessary structuring was done by Ar ion beam etching. The individual junctions exhibit a supercurrent up to 80 K. The I(c)R(n)-product of these junctions usually has a lower limit of 8 mV at 4.2 K. Voltage modulation of the first dc SQUIDs can be observed up to 66 K. At 4.2 K we investigated the voltage modulation for various bias currents and also performed noise measurements. Details on the fabrication and measurements are presented.
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页码:3062 / 3065
页数:4
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