SECONDARY-ELECTRON EMISSION FROM GAAS

被引：20

作者：

GUTIERREZ, WA

HOLT, SL

POMMERRENIG, HD

机构：

来源：

APPLIED PHYSICS LETTERS | 1972年 / 21卷 / 06期

关键词：

D O I：

10.1063/1.1654364

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：249 / +

页数：1

共 9 条

[1]

BELL RL, 1970, P IEEE, V58, P1783

[2] LONG-WAVELENGTH PHOTOEMISSION FROM GA1-XINXAS ALLOYS [J].

FISHER, DG ;

ENSTROM, RE ;

WILLIAMS, BF .

APPLIED PHYSICS LETTERS, 1971, 18 (09) :371-&

[3] OPTIMIZATION OF INASXP1-X-CS2O PHOTOCATHODE [J].

JAMES, LW ;

ANTYPAS, GA ;

UEBBING, JJ ;

YEP, TO ;

BELL, RL .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) :580-+

[4] REFLECTION AND TRANSMISSION SECONDARY EMISSION FROM SILICON [J].

MARTINEL.RU .

APPLIED PHYSICS LETTERS, 1970, 17 (08) :313-&

[5] INFRARED PHOTOEMISSION FROM SILICON [J].

MARTINELLI, RU .

APPLIED PHYSICS LETTERS, 1970, 16 (07) :261-+

[6] GaAs-Cs: A NEW TYPE OF PHOTOEMITTER [J].

Scheer, J. J. ;

van Laar, J. .

SOLID STATE COMMUNICATIONS, 1965, 3 (08) :189-193

[7] SECONDARY-ELECTRON EMISSION [J].

SIMON, RE ;

WILLIAMS, BF .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1968, NS15 (03) :167-+

[8] NEW HIGH-GAIN DYNODE FOR PHOTOMULTIPLIERS [J].

SIMON, RE ;

SOMMER, AH ;

TIETJEN, JJ ;

WILLIAMS, BF .

APPLIED PHYSICS LETTERS, 1968, 13 (10) :355-+

[9]

TURNBULL AA, 1968, BRIT J APPL PHYS, V21, P155

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