ION-IMPLANTATION DOPING OF CRYSTALLINE 6H-SIC

被引：13

作者：

SONNTAG, H ^{[1
]}

KALBITZER, S ^{[1
]}

机构：

[1] MAX PLANCK INST KERNPHYS, D-69029 HEIDELBERG, GERMANY

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1995年 / 61卷 / 04期

关键词：

D O I：

10.1007/BF01540109

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The feasibility of ion implantation for p- and n-type doping of 6H-SiC has been studied. Single crystals were implanted at room temperature with 10(17) ions/cm(3) of B and Al, and of N and P, respectively, and step-annealed at temperatures up to 1900 K. The state of the crystal order was monitored by ion-beam-scattering techniques. After annealing at 1800 K, at a backscattering yield of about 1% in [0001]-direction, maximum electrical activity of all dopants was observed within the range of 3-80% at room temperature. Impurity ionization levels were derived from conductivity measurements in the temperature range between 300-80 K, which also indicate the presence of compensating defects.

引用

页码：363 / 367

页数：5

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