ELECTRIC-FIELD-INDUCED EXCITON TRANSPORT IN COUPLED-QUANTUM-WELL STRUCTURES

被引：86

作者：

HAGN, M

ZRENNER, A

BOHM, G

WEIMANN, G

机构：

[1] Walter Schottky Institut, Technische Universität München

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 02期

关键词：

D O I：

10.1063/1.114677

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a conceptionally new approach to achieve electrostatically induced transport and confinement for spatially indirect excitons. Experimentally, exciton transport is demonstrated in an electric-field-tunable GaAs/AlAs coupled quantum well structure, which is configured as a three-terminal device. In spatially resolved photoluminescence experiments, it is shown that indirect excitons experience a drift field, which is given by an electrostatically induced band-gap gradient in the plane of the coupled quantum well structure.© 1995 American Institute of Physics.

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页码：232 / 234

页数：3

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