Fabrication, modeling, and characterization of form-birefringent nanostructures

被引：86

作者：

Xu, F ^{[1
]}

Tyan, RC ^{[1
]}

Sun, PC ^{[1
]}

Fainman, Y ^{[1
]}

Cheng, CC ^{[1
]}

Scherer, A ^{[1
]}

机构：

[1] CALTECH,DEPT ELECT ENGN,PASADENA,CA 91125

来源：

OPTICS LETTERS | 1995年 / 20卷 / 24期

关键词：

D O I：

10.1364/OL.20.002457

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A 490-nm-deep nanostructure with a period of 200 nm was fabricated in a GaAs substrate by use of electron-beam lithography and dry-etching techniques. The form birefringence of this microstructure was studied numerically with rigorous coupled-wave analysis and compared with experimental measurements at a wavelength of 920 nm. The numerically predicted phase retardation of 163.3 degrees was found to be in close agreement with the experimentally measured result of 162.5 degrees, thereby verifying the validity of our numerical modeling. The fabricated microstructures show extremely large artificial anisotropy compared with that available in naturally birefringent materials and are useful for numerous polarization optics applications. (C) 1995 Optical Society of America

引用

页码：2457 / 2459

页数：3

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