OSCILLATORY PHOTOCONDUCTIVITY OF EPITAXIAL GAAS

被引：42

作者：

NAHORY, RE

机构：

[1] Bell Telephone Laboratories, Holmdel

来源：

PHYSICAL REVIEW | 1969年 / 178卷 / 03期

关键词：

D O I：

10.1103/PhysRev.178.1293

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Oscillation due to interaction of photoexcited electrons and optical phonons has been observed in the intrinsic photoconductivity spectrum of epitaxial GaAs at 2<°K. From the spacing of the minima of the oscillation, values have been obtained for the energy gap (1.520 eV) and for the effective-mass ratio for heavy holes and electrons mhme=6.2. © 1969 The American Physical Society.

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页码：1293 / &

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