INTERSUBBAND ABSORPTION IN HIGHLY STRAINED INGAAS/INALAS MULTIQUANTUM WELLS

被引：44

作者：

ASAI, H

KAWAMURA, Y

机构：

[1] NTT Opto-Electronics Laboratories, Atsugi, Kanagawa 243-01

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 08期

关键词：

D O I：

10.1063/1.102700

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly strained In0.66 Ga0.34 As/In0.30 Al0.70 As multiquantum wells (MQWs) are successfully grown on (001)InP substrates by moleular beam epitaxy. Good crystal quality in the strained MQWs is confirmed by clear excitonic peaks and sharp photoluminescence spectra. Intersubband absorption at a wavelength as short as 3.1 μm was obtained for the first time in uniformly Si-doped strained MQWs.

引用

页码：746 / 748

页数：3

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