DISLOCATIONS AND ELECTRICAL CHARACTERISTICS OF HGCDTE

The electrical characteristics of HgCdTe samples have been experimentally examined as a function of dislocation density. MIS measurements on samples with a graded dislocation density ranging from about 2 multiplied by 10**5 to 2 multiplied by 10**6 cm**2 showed the net doping concentration is independent of local dislocation density, but that MIS dark current varies linearly with dislocation density. No evidence for impurity segregation to dislocations was observed between the low and high dislocation density region. Deformed HgCdTe shows a larger decrease in the electron mobility after low temperature plasma hydrogenation than do undeformed samples. Dislocation density may influence the hydrogen solubility in these samples. Collectively, both the MIS and Hall results suggests dislocations themselves do not contribute to the carrier concentration in HgCdTe.