MEASUREMENT OF THE AMBIPOLAR CARRIER CAPTURE TIME IN A GAAS-ALXGA1-XAS SEPARATE CONFINEMENT HETEROSTRUCTURE QUANTUM-WELL

被引:14
作者
BLOM, PWM
MOLS, RF
HAVERKORT, JEM
LEYS, MR
WOLTER, JH
机构
[1] Department of Physics, Eindhoven University of Technology, 5600 MB
关键词
D O I
10.1016/0749-6036(90)90217-U
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The carrier capture in a separate confinement heterostructure quantum well has been studied both experimentally and theoretically. Our calculations show that the electron and hole capture time vary strongly as a function of the excess energy. At an excess energy of 40 meV, both capture times are equal resulting in an ambipolar capture process which allows a direct comparison between theory and experiment. We carried out subpicosecond luminescence spectroscopy experiments and deduce an ambipolar overall capture time of 20 ps, a number which for the first time is in agreement with theoretical predictions. The quantum mechanical overall capture time of 20 ps gives rise to a classical local capture time of 3 ps which is determined from a diffusion model. © 1990.
引用
收藏
页码:319 / 321
页数:3
相关论文
共 4 条
[1]   RESONANT CARRIER CAPTURE BY SEMICONDUCTOR QUANTUM-WELLS [J].
BRUM, JA ;
BASTARD, G .
PHYSICAL REVIEW B, 1986, 33 (02) :1420-1423
[2]   CAPTURE OF PHOTOEXCITED CARRIERS BY A LASER STRUCTURE [J].
DEVEAUD, B ;
CLEROT, F ;
REGRENY, A ;
FUJIWARA, K ;
MITSUNAGA, K ;
OHTA, J .
APPLIED PHYSICS LETTERS, 1989, 55 (25) :2646-2648
[3]   CAPTURE OF ELECTRONS AND HOLES IN QUANTUM WELLS [J].
DEVEAUD, B ;
SHAH, J ;
DAMEN, TC ;
TSANG, WT .
APPLIED PHYSICS LETTERS, 1988, 52 (22) :1886-1888
[4]   MODEL-CALCULATIONS OF DIFFUSION LIMITED TRAPPING DYNAMICS IN QUANTUM WELL LASER STRUCTURES [J].
WELLER, A ;
THOMAS, P ;
FELDMANN, J ;
PETER, G ;
GOBEL, EO .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1989, 48 (06) :509-515