ABINITIO CALCULATIONS OF THE ELECTRONIC PROPERTIES OF N4- IN KN3

被引:3
作者
BENT, GD
BARTRAM, RH
ROSSI, AR
KEMMEY, PJ
机构
[1] FELTMAN RES LABS,PICATINNY ARSENAL,DOVER,NJ 07801
[2] UNIV CONNECTICUT,DEPT PHYS,STORRS,CT 06268
[3] UNIV CONNECTICUT,INST MAT SCI,STORRS,CT 06268
[4] UNIV CONNECTICUT,DEPT CHEM,STORRS,CT 06268
关键词
D O I
10.1016/0022-3697(79)90077-5
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The energies of the ground state and low-lying excited states of the N4- defect in KN3 have been calculated using ab initio techniques. A rectangular equilibrium geometry with dimensions X = 2.76 and Z = 2.47 a.u. and ground state symmetry of Γ4+ was determined by calculating N4- as a free radical. For this ground state the unpaired electron is in a π orbital which is consistent with the experimental hyperfine tensor only if one edge of the N4- radical is parallel to the c axis in KN3. These results were used to calculate the X2Γ4+ state of N4- in the crystal field of KN3, yielding an energy of -217.899 Hartrees. The isotropic hyperfine constant was calculated to be a = 2.1 G and the components of the anisotropic hyperfine tensor as Bxx = -3.4 G, Byy = 7.0 G and Bzz = -3.6 G, in good agreement with experimental and INDO results. Several excited states were calculated for the N4- defect in KN3. When an estimate was made of the correlation energy, the transition energy of the X2Γ4+→A2Γ3- transition agreed well with the peak energy of the 780 nm absorption band which has been attributed to N4-. © 1979.
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页码:493 / 502
页数:10
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