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DIFFUSION-COEFFICIENT OF H+ AT NB2O5 LAYERS PREPARED BY THERMAL-OXIDATION OF NIOBIUM

被引：15
作者：
GOMES, MAB
BULHOES, LOD
机构：
[1] Laboratório Interdisciplinar de Eletroquímica e Cerâmica, Departamento de Química, Universidade Federal de São Carlos, 13560 São Carlos
来源：
ELECTROCHIMICA ACTA | 1990年 / 35卷 / 04期
关键词：
D O I：
10.1016/0013-4686(90)90012-O
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The diffusion coefficient of H+ in the Nb2O5 layers prepared by thermal oxidation of Nb has been measured with the short pulse galvanostatic technique. Values ranging from 5.2 × 10-7 cm2 s-1, at x = 0.8 × 10-2, to 3.6 × 10-8 cm2 s-1, at x = 4.2 × 10-2 for 1 = 7.6 μm, have been measured. The influence of thickness and morphology on the ionic transport mechanism of H+ is analysed. © 1990.
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页码：765 / 768
页数：4
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