INTERFACE-PHONON POLARITONS IN GAAS ALAS HETEROSTRUCTURES

被引：6

作者：

NAKAYAMA, M ^{[1
]}

ISHIDA, M ^{[1
]}

SANO, N ^{[1
]}

机构：

[1] KWANSEI GAKUIN UNIV,DEPT PHYS,NISHINOMIYA,HYOGO 662,JAPAN

来源：

SURFACE SCIENCE | 1990年 / 228卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(90)90274-C

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have investigated interface-phonon polaritons (IPP's) in GaAs (thickness = d1)/AlAs(d2)/GaAs(substrate) heterostructures by using Raman spectroscopy at 100 K and room temperature in a quasi-backscattering configuration. The dimensions of our samples are (d1, d2)=(10, 500) and (60, 500) in units of nm. We have observed the IPP modes originating from the upper and lower interfaces of GaAs/AlAs/GaAs both in the frequency range between the transverse-optical and longitudinal-optical phonons of GaAs and in that of AlAs. The frequencies of the IPP modes depend on the scattering configuration (incident-light angle) and the layer thickness. We discuss the dispersion relation and the layer-thickness modulation of the IPP modes. © 1990.

引用

页码：131 / 134

页数：4

共 11 条

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