A NOVEL BIASED ANTI-PARALLEL SCHOTTKY DIODE STRUCTURE FOR SUBHARMONIC MIXING

被引：7

作者：

LEE, TH

CHI, CY

EAST, JR

REBEIZ, GM

HADDAD, GI

机构：

[1] Jet Propulsion Laboratory, California Institute of Technology, Pasadena

[2] NASA Center for Space Terahertz Technology, The University of Michigan, Ann Arbor

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1994年 / 4卷 / 10期

关键词：

D O I：

10.1109/75.324710

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Subharmonically pumped mixers using zero-biased anti-parallel Schottky diode pairs produce good results, but require a larger LO power than biased Schottky diodes. Presented here is a novel planar-diode anti-parallel pair that allows independent biasing of the two diodes. This diode pair is integrated into a quasi-optical wideband receiver and the RF measurements on a 1.2-mum anode diameter pair show a reduced LO power requirement at 180 GHz by a factor of 2 to 3 with a similar DSB conversion loss and noise temperature (9.7 dB and 1850-degrees-K) to an unbiased Schottky diode pair. This structure has potential for applications at submillimeter-wave frequencies where a large amount of LO power is not easily available.

引用

页码：341 / 343

页数：3

共 7 条

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[2]

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[3]

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[4]

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[5]

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[6]

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[7]

Filipovic D.F., Gearhart S.S., Rebeiz G.M., Double-Slot Antenna on Extented Hemispherical and Elliptical Silicon Dielectric Lenses, IEEE Trans. Microwave Theory Tech, 41, 10, pp. 1738-1749, (1993)

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