REACTIVELY SPUTTERED WSIN FILM SUPPRESSES AS AND GA OUTDIFFUSION

被引：49

作者：

ASAI, K

SUGAHARA, H

MATSUOKA, Y

TOKUMITSU, M

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 05期

关键词：

D O I：

10.1116/1.584207

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1526 / 1529

页数：4

共 12 条

[1] PIEZOELECTRIC EFFECTS IN GAAS-FETS AND THEIR ROLE IN ORIENTATION-DEPENDENT DEVICE CHARACTERISTICS [J].

ASBECK, PM ;

LEE, CP ;

CHANG, MCF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (10) :1377-1380

[2]

FAIRFIELD JM, 1968, ELECTROCHEM TECHNOL, V6, P110

[3] OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE [J].

GYULAI, J ;

MAYER, JW ;

MITCHELL, IV ;

RODRIGUEZ, V .

APPLIED PHYSICS LETTERS, 1970, 17 (08) :332-+

[4] A GAAS 16-KBIT STATIC RAM USING DISLOCATION-FREE CRYSTAL [J].

HIRAYAMA, M ;

TOGASHI, M ;

KATO, N ;

SUZUKI, M ;

MATSUOKA, Y ;

KAWASAKI, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (01) :104-110

[5] EFFECTS OF ION-IMPLANTED NITROGEN IMPURITIES ON MOLYBDENUM SILICIDE FORMATION [J].

HO, KT ;

NICOLET, MA ;

SCOTT, DM .

THIN SOLID FILMS, 1985, 127 (1-2) :171-179

[6]

Kanamori M., 1985, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1985 (Cat. No.85CH2182-4), P49

[7] CHARACTERIZATION OF WSIX/GAAS SCHOTTKY CONTACTS [J].

OHNISHI, T ;

YOKOYAMA, N ;

ONODERA, H ;

SUZUKI, S ;

SHIBATOMI, A .

APPLIED PHYSICS LETTERS, 1983, 43 (06) :600-602

[8]

SUGAHARA H, 1984, 31ST P SPRING M JPN, P573

[9] THERMAL-STABILITY OF WSIX/GAAS INTERFACE [J].

TAKATANI, S ;

MATSUOKA, N ;

SHIGETA, J ;

HASHIMOTO, N ;

NAKASHIMA, H .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (01) :220-224

[10]

UCHITOMI N, 1984, 16TH C SOL STAT DEV, P383

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