DISCOVERY OF ANOMALOUS BASE REGIONS IN TRANSISTORS

[1] FAST FOURIER TRANSFORM AND ITS APPLICATIONS [J]. IEEE TRANSACTIONS ON EDUCATION, 1969, E 12 (01) : 27 - &

[2] CROSET PM, 1971, REV TECH THANSON CSF, V3, P19

[3] INTERACTIONS IN SEQUENTIAL DIFFUSION PROCESSES IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) : 4272 - +

[4] HU SM, PRIVATE COMMUNICATIO

[5] ON AMBIPOLAR DIFFUSION OF IMPURITIES INTO SILICON [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (06) : 1202 - +

[6] CHEMICAL INTERACTIONS AMONG DEFECTS IN GERMANIUM AND SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (03): : 535 - 636

[7] STOPPING CROSS SECTIONS FOR 0.3-TO 1.7-MEV HELIUM IONS IN SILICON AND SILICON DIOXIDE [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (10) : 3969 - &

[8] AVALANCHING IN GAAS P-PI-P STRUCTURES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (02) : 171 - &

[9] DETERMINATION OF SURFACE IMPURITY CONCENTRATION PROFILES BY NUCLEAR BACKSCATTERING [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 2031 - &

[1] FAST FOURIER TRANSFORM AND ITS APPLICATIONS [J]. IEEE TRANSACTIONS ON EDUCATION, 1969, E 12 (01) : 27 - &

[2] CROSET PM, 1971, REV TECH THANSON CSF, V3, P19

[3] INTERACTIONS IN SEQUENTIAL DIFFUSION PROCESSES IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) : 4272 - +

[4] HU SM, PRIVATE COMMUNICATIO

[5] ON AMBIPOLAR DIFFUSION OF IMPURITIES INTO SILICON [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (06) : 1202 - +

[6] CHEMICAL INTERACTIONS AMONG DEFECTS IN GERMANIUM AND SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (03): : 535 - 636

[7] STOPPING CROSS SECTIONS FOR 0.3-TO 1.7-MEV HELIUM IONS IN SILICON AND SILICON DIOXIDE [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (10) : 3969 - &

[8] AVALANCHING IN GAAS P-PI-P STRUCTURES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (02) : 171 - &

[9] DETERMINATION OF SURFACE IMPURITY CONCENTRATION PROFILES BY NUCLEAR BACKSCATTERING [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 2031 - &