THE ELECTRON-BEAM PROXIMITY PRINTING LITHOGRAPHY, A CANDIDATE FOR THE 0.35 AND 0.25 MICRON CHIP GENERATIONS

被引:2
作者
BEHRINGER, U
HAUG, W
MEISSNER, K
ZIEMLICH, W
BOHLEN, H
BAYER, T
KULCKE, W
ROTHUIZEN, H
SASSO, G
VETTIGER, P
机构
[1] IBM German Manufacturing Technology Center, 7032 Sindelfingen
[2] IBM Zuerich Research Laboratory, Saeumerstr. 4
关键词
Electron beam lithography - Semiconductor device manufacture;
D O I
10.1016/0167-9317(91)90112-Q
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Following the trends in the semiconductor technology to higher density and smaller dimensions the light-optical tools get serious technical problems to solve the requirements on resolution, depth of focus and overlay. Besides exposure tools using DUV / excimer laser sources other technologies like e-beam and X-ray will follow. There are several requirements which have to be solved to demonstrate the capability of a lithography technique for the fabrication of ULSI circuits. Three of them, the mask technology. resolution of a high throughput exposure tool. registration capability for layer to layer overlay. will be addressed in this paper and will confirm that the Electron Beam Proximity Printing (EBP) technology can fulfill these requirements for the 64 Mbit and 256 Mbit chip generations with minimum linewidths of 0.35 and 0.25 micron respectively.
引用
收藏
页码:361 / 364
页数:4
相关论文
共 3 条
[1]  
Bohlen, Behringer, Keyser, Nehmiz, Zapka, Kulcke, High Throughput Submicron Lithography with Electron Beam Proximity Printing, Solid State Technology, (1984)
[2]  
Behringer, Stolz, Trumpp, Greschmer, Silicon Masks for an Electron Beam Proximity Printer Achieved by Reactive Ion Etching (RIE), Proceedings of the 2. Conference for Study on Dry Etching in Microelectronic
[3]  
Meissner, Haug, Silverman, Sonschik, Electron-beam proximity printing of half-micron devices, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 7, 6, pp. 1443-1447, (1989)