THE HIGH TEMPERATURE OXIDATION OF SILICON

被引:63
作者
LAW, JT
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D O I
10.1021/j150555a016
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
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页码:1200 / 1205
页数:6
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共 17 条
[1]  
Allen F.G., COMMUNICATION
[2]   NEW DEVELOPMENTS IN THE PRODUCTION AND MEASUREMENT OF ULTRA HIGH VACUUM [J].
ALPERT, D .
JOURNAL OF APPLIED PHYSICS, 1953, 24 (07) :860-876
[3]  
BREWER L, 1950, CHEM METALLURGY MISC, P13
[4]   THE OXIDATION OF SILICON AT HIGH TEMPERATURES [J].
BRODSKY, MB ;
CUBICCIOTTI, D .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1951, 73 (07) :3497-3499
[5]   THEORY OF THE OXIDATION OF METALS [J].
CABRERA, N ;
MOTT, NF .
REPORTS ON PROGRESS IN PHYSICS, 1948, 12 :163-184
[6]  
ENGELL HJ, 1952, METALL, V6, P285
[7]  
Glasstone S., 1941, THEORY RATE PROCESSE, P477
[8]  
Gulbransen E., 1943, T ELECTROCHEM SOC, V83, P301
[9]  
GULBRANSEN EA, 1950, T ELECTROCHEM SOC, V97, P383
[10]  
HONIG RE, 1954, J CHEM PHYS, V22, P1610