ELECTRON-TRANSPORT IN NIOBIUM-SILICON-NIOBIUM STRUCTURES

被引：26

作者：

HESLINGA, DR

VANHUFFELEN, WM

KLAPWIJK, TM

机构：

[1] Department of Applied Physics, Materials Science Centre., University of Groaingen, Nijenborgh 18 9747, AG Groningen

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1991年 / 27卷 / 02期

关键词：

D O I：

10.1109/20.133908

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A model is presented for the voltage-carrying state of semiconductor coupled superconducting weak links. Characteristic elements are the Schottky barrier at the interface and a nonequilibrium population of states in the semiconductor. Experimental results of several Nb-Si-Nb structures are shown to be in partial agreement with the model. Deviations are ascribed to the neglect of multiple Andreev reflections.

引用

页码：3264 / 3267

页数：4

共 13 条

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