EFFECT OF THE MADELUNG POTENTIAL ON SURFACE CORE-LEVEL SHIFTS IN GAAS

被引：45

作者：

DAVENPORT, JW ^{[1
]}

WATSON, RE ^{[1
]}

PERLMAN, ML ^{[1
]}

SHAM, TK ^{[1
]}

机构：

[1] BROOKHAVEN NATL LAB,DEPT PHYS,UPTON,NY 11973

来源：

SOLID STATE COMMUNICATIONS | 1981年 / 40卷 / 11期

关键词：

D O I：

10.1016/0038-1098(81)90053-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：999 / 1002

页数：4

共 27 条

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[10] TRENDS IN SURFACE ATOMIC GEOMETRIES OF COMPOUND SEMICONDUCTORS
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