THE OBSERVATION OF OXYGEN DISORDER ON THE V2O5(001) SURFACE USING SCANNING-TUNNELING-MICROSCOPY

被引：37

作者：

SMITH, RL ^{[1
]}

LU, W ^{[1
]}

ROHRER, GS ^{[1
]}

机构：

[1] CARNEGIE MELLON UNIV,DEPT MAT SCI & ENGN,PITTSBURGH,PA 15213

来源：

SURFACE SCIENCE | 1995年 / 322卷 / 1-3期

关键词：

SCANNING TUNNELING MICROSCOPY; SEMIEMPIRICAL MODELS AND MODEL CALCULATIONS; SINGLE CRYSTAL SURFACES; SURFACE STRUCTURE; MORPHOLOGY; ROUGHNESS; AND TOPOGRAPHY; VANADIUM OXIDE;

D O I：

10.1016/0039-6028(95)90038-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Constant current scanning tunneling microscope images of the V2O5(001) surface were recorded in ultrahigh vacuum (UHV). The conductivity of the V2O5 crystal was increased by doping with Na during the crystal growth and flat surfaces were created by cleavage in N-2 or UHV. All images exhibit the 11.5 Angstrom x 3.65 Angstrom periodicity expected for a bulk terminated surface. However, images from different areas of the surface have different contrast and these variations are explained by assuming incomplete and inhomogeneous occupation of the vanadyl oxygen sites. This assumption is supported by image simulations which demonstrate that loss of the surface vanadyl O could account for the observed changes in contrast. Because these surface O vacancies are thought to influence the catalytic properties of the surface, their characterization is an important step towards understanding how the atomic-scale structure of a surface influences its properties.

引用

页码：293 / 300

页数：8

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