MULTIPHONON NONRADIATIVE RECOMBINATION DUE TO SUCCESSIVE ELECTRON AND HOLE CAPTURE BY A DEEP-LEVEL DEFECT IN SEMICONDUCTORS

被引：25

作者：

SUMI, H

机构：

来源：

关键词：

D O I：

10.1103/PhysRevLett.47.1333

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1333 / 1336

页数：4

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[10]

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