THEORETICAL-STUDY OF BAND OFFSETS AT SEMICONDUCTOR INTERFACES

被引：562

作者：

VAN DE WALLE, CG

MARTIN, RM

机构：

[1] STANFORD UNIV, STANFORD ELECTR LABS, STANFORD, CA 94305 USA

[2] XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.35.8154

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8154 / 8165

页数：12

共 69 条

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