ELECTROLUMINESCENT SOURCE WITH LUMINANCE GREATER THAN 6 X 109 CD/M2

被引：1

作者：

PANKOVE, JI

HEGYI, IJ

机构：

[1] RCA Labs., Princeton, N.J.

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1968年 / 56卷 / 03期

关键词：

D O I：

10.1109/PROC.1968.6277

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAs1-xpx injection lasers were found to emit 6440 A radiation at an avernge output level of 2 x 104 W/cm2 from each of the two Fabry-Perot facets. Copyright © 1968 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：324 / &

共 8 条

[1]

BONIN EL, 1965, ELECTRONICS, P98

[2]

FISCHER AG, 1966, LUMINESCENCE INORGAN, P552

[3]

GERSHENZON M, 1966, BELL SYST TECH J, V45, P1599

[4]

GOLDBERG P, 1966, LUMINESCENCE INOR ED, P552

[5]

HARDY AC, 1932, PRINCIPLES OPTICS, P18

[6] HIGH POWER AND EFFICIENCY IN CDS ELECTRON BEAM PUMPED LASERS [J].

HURWITZ, CE .

APPLIED PHYSICS LETTERS, 1966, 9 (12) :420-&

[7] CATASTROPHIC DEGRADATION IN GAAS INJECTION LASERS [J].

KRESSEL, H ;

MIEROP, H .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (13) :5419-&

[8]

TIETJEN JJ, 1967, T METALL SOC AIME, V239, P385

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