DI/DT CAPABILITY OF THYRISTORS

被引:36
作者
IKEDA, S
ARAKI, T
机构
来源
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1967年 / 55卷 / 08期
关键词
D O I
10.1109/PROC.1967.5830
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1301 / &
相关论文
共 12 条
[1]  
DODSON WH, 1966, IEEE T, VED13, P598
[2]  
DODSON WH, 1966, IEEE T ELECTRON DEVI, VED13, P478
[3]  
DYER RF, 1966, IEEE T INDUSTRY GENE, VIGA2, P5
[4]  
GENTRY FE, 1964, SEMICONDUCTOR CONTRO, P138
[5]  
GENTRY FE, 1964, SEMICONDUCTOR CONTRO, P120
[6]  
GERLACH W, 1965, Z ANGEW PHYSIK, V19, P396
[7]  
HUBNER K, 1961, IRE T ELECTRON DEVIC, VED 8, P461
[8]   EFFECT OF NONUNIFORM P-TYPE BASE WIDTH ON FORWARD SWITCHING VOLTAGE OF DIFFUSED-ALLOYED THYRISTORS [J].
KNOPP, AN ;
STICKLER, R .
SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1119-&
[9]  
MAPHAM N, 1962, ELECTRONICS, V35, P50
[10]  
MISAWA T, 1959, J ELECTRON CONTR, V7, P523