LEVEL-ANTICROSSING EFFECT ON THE MAGNETOLUMINESCENCE OF THE TRIPLET INDIRECT BOUND EXCITON IN GASE

被引:6
作者
ANNO, H
NISHINA, Y
机构
[1] The Research Institute for Iron, Steel and Other Metals, Tohoku University, Sendai
关键词
D O I
10.1016/0038-1098(79)91212-2
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The presence of level-anticrossing in the triplet state of the indirect impurity-bound exciton in GaSe has been found for the first time in the magnetic field of 1.5 kOe applied along the c-axis. Measurements on the magnetic circular dichroism (MCD) of the photoluminescence and on the spin dependent formation rate (SDFR) show that the |Sz| = 1 level lies 0.016 meV higher than the Sz = 0 level in the absence of the magnetic field. The resonance-like behavior in these two types of polarization correlation measurements may be explained in terms of weak perturbation between |Sz| = 1 and Sz = 0 levels. © 1979.
引用
收藏
页码:439 / 442
页数:4
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