ANALYSIS OF DEFECTS IN WEAKLY DAMAGED GAAS BY MONTE-CARLO CHANNELING SIMULATION

被引：8

作者：

DYGO, A ^{[1
]}

KACZANOWSKI, J ^{[1
]}

TUROS, A ^{[1
]}

WESCH, W ^{[1
]}

GARTNER, K ^{[1
]}

GOTZ, G ^{[1
]}

机构：

[1] UNIV JENA,O-6900 JENA,GERMANY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1992年 / 64卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(92)95565-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Channeling spectra measured at 125 and 295 K for <100> GaAs single crystals implanted with low dose N ions were analyzed by two methods: analytical dechanneling theory and Monte Carlo computer simulation. From the temperature dependence of dechanneling it was found that the defect structure consists of atoms statically displaced by a given distance from their lattice site position. The role of thermal vibrations of displaced atoms was also discussed.

引用

页码：721 / 723

页数：3

共 8 条

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