STABILIZATION OF DIAMOND RELATIVE TO DIFFERENT SUBSTRATE CARBON INTERFACES - A NUCLEATION MODEL FOR CVD DIAMOND GROWTH BASED ON A CHARGE-TRANSFER CONSIDERATION

被引:7
作者
SANDRE, E
BONNOT, AM
CYROTLACKMANN, F
机构
[1] Laboratoire d'Etudes des Propriétés Electroniques des Solides, CNRS, F-38042 Grenoble
关键词
D O I
10.1016/0925-9635(94)90201-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The interaction between the carbon phase and the substrate is the determining factor in chemically vapor deposited diamond thin film growth processes. Considering the similarity between (1,1,1) diamond planes and (0,0,0,1) graphite planes, we present calculation results concerning the stabilization geometry in respect with interfacial charge transfer between a substrate and or a graphite sheet. We then propose a nucleation model for CVD diamond films based on corrugated graphite precursors.
引用
收藏
页码:448 / 451
页数:4
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