SIMOX - A NEW CHALLENGE FOR ION-IMPLANTATION

被引：20

作者：

AUBERTONHERVE, A

WITTKOWER, A

ASPAR, B

机构：

[1] SOITEC USA,PEABODY,MA 01960

[2] CEN,DMEL,CEA TECHNOL AVANCEES,LETI,F-38041 GRENOBLE,FRANCE

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1995年 / 96卷 / 1-2期

关键词：

D O I：

10.1016/0168-583X(94)00532-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Silicon On Insulator technologies have reached a degree of maturity with the SIMOX technology based on oxygen ion implantation. Since 1990, some rad-hard and space oriented product like SRAMs have been produced demonstrating the manufacturability of this new technology for high complexity ICs. Additionally, commercial applications on SOI have started to emerge, with the low voltage high speed market appearing to be the most promising. For this market, a low dose SIMOX process has been developed with two major advantages: a reduction in cost and a better crystalline quality. In the process optimisation described, not only the dose but also the energy can be lowered; a complete change of design of the oxygen implantation machine is then possible.

引用

页码：420 / 424

页数：5