BAND STRUCTURE OF BISMUTH - PSEUDOPOTENTIAL APPROACH

被引:201
作者
GOLIN, S
机构
[1] Department of Mining, Metallurgy, and Petroleum Engineering, University of Illinois, Urbana, IL
[2] Department of Physics, University of Pittsburgh, Pittsburgh, PA
[3] Department of Physics, University of Pittsburgh, Pittsburgh
来源
PHYSICAL REVIEW | 1968年 / 166卷 / 03期
关键词
D O I
10.1103/PhysRev.166.643
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The electronic band structure of bismuth is studied by means of a pseudopotential approach. The Lin-Kleinman pseudopotential was adopted; its parameters were adjusted slightly to bring the band structure into agreement with two known energy differences in bismuth. With this pseudopotential, the band structure along symmetry lines and planes is calculated and the effective masses of the carriers are studied. The band structure is in good agreement with optical data and with effective-mass anisotropies, but the magnitude of the effective masses may differ from experiment by a factor of 3. Using the experimental effective masses and g factor of the holes, we infer the energy-level scheme at T near EF. Also, we have tentatively identified a higher-lying band which has been experimentally observed. A very efficient method of calculating nonlocal and spin-orbit coupling terms in k•π perturbation theory is presented. © 1968 The American Physical Society.
引用
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页码:643 / &
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