ACCURACY OF ZERO-CHARGE AND ZERO-DIPOLE APPROXIMATIONS FOR THE DETERMINATION OF VALENCE-BAND OFFSETS AT SEMICONDUCTOR HETEROJUNCTIONS

被引：24

作者：

PRIESTER, C

ALLAN, G

LANNOO, M

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.584251

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1290 / 1294

页数：5

共 22 条

[1] ENERGY-BAND ALIGNMENT IN GAAS - (AL,GA)AS HETEROSTRUCTURES - THE DEPENDENCE ON ALLOY COMPOSITION
BATEY, J
WRIGHT, SL
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) : 200 - 209
[2] SPECIAL POINTS IN 2-DIMENSIONAL BRILLOUIN ZONE
CUNNINGHAM, SL
[J]. PHYSICAL REVIEW B, 1974, 10 (12): : 4988 - 4994
[3] OPTICAL EVIDENCE OF THE DIRECT-TO-INDIRECT-GAP TRANSITION IN GAAS-ALAS SHORT-PERIOD SUPERLATTICES
DANAN, G
ETIENNE, B
MOLLOT, F
PLANEL, R
JEANLOUIS, AM
ALEXANDRE, F
JUSSERAND, B
LEROUX, G
MARZIN, JY
SAVARY, H
SERMAGE, B
[J]. PHYSICAL REVIEW B, 1987, 35 (12): : 6207 - 6212
[4] STAGGERED BAND ALIGNMENTS IN ALGAAS HETEROJUNCTIONS AND THE DETERMINATION OF VALENCE-BAND OFFSETS
DAWSON, P
WILSON, BA
TU, CW
MILLER, RC
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (08) : 541 - 543
[5] DUC TM, 1987, PHYS REV LETT, V58, P1129
[6] EFFECTIVE TWO-DIMENSIONAL HAMILTONIAN AT SURFACES
GUINEA, F
TEJEDOR, C
FLORES, F
LOUIS, E
[J]. PHYSICAL REVIEW B, 1983, 28 (08) : 4397 - 4402
[7] SCHOTTKY-BARRIER FORMATION .1. ABRUPT METAL-SEMICONDUCTOR JUNCTIONS
GUINEA, F
SANCHEZDEHESA, J
FLORES, F
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (33): : 6499 - 6512
[8] TIGHT-BINDING THEORY OF HETEROJUNCTION BAND LINEUPS AND INTERFACE DIPOLES
HARRISON, WA
TERSOFF, J
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 1068 - 1073
[9] POLAR HETEROJUNCTION INTERFACES
HARRISON, WA
KRAUT, EA
WALDROP, JR
GRANT, RW
[J]. PHYSICAL REVIEW B, 1978, 18 (08): : 4402 - 4410
[10] HARRISON WA, 1980, ELECTRONIC STRUCTURE, P113

← 1 2 3 →