HILLOCK GROWTH AND STRESS RELIEF IN SPUTTERED AU FILMS

被引：81

作者：

PENNEBAKER, WB

机构：

[1] IBM Watson Research Center, Yorktown Heights

来源：

JOURNAL OF APPLIED PHYSICS | 1969年 / 40卷 / 01期

关键词：

D O I：

10.1063/1.1657067

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Growth of hillocks has been observed during annealing of sputtered Au films. The height of a hillock is proportional to the area it occupies in the film. This empirical relationship has been used in a model which postulates that hillock growth is associated with stress relief in the Au. The model is able to relate the sign and magnitude of the stress with hillock size and density. The general character of the growth kinetics is also predicted by the model. © 1969 The American Institute of Physics.

引用

页码：394 / +

页数：1

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