SOME UNIQUE ASPECTS ON THO2-DOPED SNO2 EXPOSED TO H-2 GAS

被引：10

作者：

KANEFUSA, S

NITTA, M

HARADOME, M

机构：

[1] Physical Science Laboratories, Nihon University at Narashino, Funabashi, Chibaken

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 02期

关键词：

D O I：

10.1063/1.326054

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In ThO2-doped SnO2 exposed to H2 gas, the remarkable phenomenon like the increase of sample resistivity has been found in spite of n-type semiconductors. This phenomenon depends on the gas concentration, the sample temperature, and also the history of the samples. In samples sintered at 600 °C, it appears remarkably at the sample temperature below 240 °C and above 250 ppm of the gas concentration.

引用

页码：1145 / 1146

页数：2

共 8 条

[1] OSCILLATION PHENOMENON IN THO2-DOPED SNO2 EXPOSED TO CO GAS [J].