THE DESIGN OF A ONE MEGABIT NON-VOLATILE M-R MEMORY CHIP USING 1.5 X 5-MU-M CELLS

被引：37

作者：

POHM, AV ^{[1
]}

HUANG, JST ^{[1
]}

DAUGHTON, JM ^{[1
]}

KRAHN, DR ^{[1
]}

MEHRA, V ^{[1
]}

机构：

[1] HONEYWELL CORP CSSL,PLYMOUTH,MN 55441

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1988年 / 24卷 / 06期

关键词：

The authors would like to thank Jeanne Cacavas and Shirley Calhoun for preparation of the manuscript. This work was supported by a grant from Honeywell Inc. The materials work involved was also supported by Control Data Corp;

D O I：

10.1109/20.92353

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：3117 / 3119

页数：3