DUAL-SIDE CONTACT FORMATION ON ISOLATED DIAMOND FILMS

被引：8

作者：

ENGEMANN, J ^{[1
]}

KELLER, H ^{[1
]}

REINHARD, DK ^{[1
]}

HUANG, B ^{[1
]}

ASMUSSEN, J ^{[1
]}

机构：

[1] UNIV MICHIGAN,DEPT ELECT ENGN,ANN ARBOR,MI 48109

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 23期

关键词：

D O I：

10.1063/1.103851

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method is described for transferring deposited diamond films to a second substrate, thereby providing access to the diamond film back surface and also allowing post-deposition contact formation to both surfaces of the film. The availability of both sides of the diamond film allows increased experimental control and flexibility for investigation of electrical properties and contact phenomena. The films are deposited in a microwave plasma disk reactor onto silicon substrates and transferred to epoxy substrates. Also presented is a comparison of the roughness of the top and bottom film surfaces, a Raman spectrum of the transferred film, and current-voltage characteristics of samples with dual-side contacts.

引用

页码：2461 / 2463

页数：3

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MICROWAVE CAVITY MOD

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