GENERATION OF FEMTOSECOND ELECTROMAGNETIC PULSES FROM SEMICONDUCTOR SURFACES

被引：500

作者：

ZHANG, XC ^{[1
]}

HU, BB ^{[1
]}

DARROW, JT ^{[1
]}

AUSTON, DH ^{[1
]}

机构：

[1] COLUMBIA UNIV,CTR TELECOMMUN RES,NEW YORK,NY 10027

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 11期

关键词：

D O I：

10.1063/1.102601

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have generated electromagnetic beams from a variety of semiconductors. When a bare semiconductor wafer was illuminated by femtosecond optical pulses, electromagnetic waves radiate from the surface and form collinear diffraction-limited electromagnetic beams in the inward and outward directions. The amplitude and phase of the radiated field depend on carrier mobility, the strength and polarity of the static internal field at the semiconductor surface.

引用

页码：1011 / 1013

页数：3

共 9 条

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[9] ZHANG X, UNPUB

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