ENERGY, FLUENCE AND TEMPERATURE-DEPENDENCE OF MEV NITROGEN IMPLANTATION PROFILES IN STEEL

被引：8

作者：

FINK, D

MULLER, M

WANG, L

SIEGEL, J

VREDENBERG, A

MARTAN, J

FAHRNER, W

机构：

[1] FOM,INST,1098 SJ AMSTERDAM,NETHERLANDS

[2] WROCLAW TECH UNIV,INST TECHNOL ELECTR,PL-50372 WROCLAW,POLAND

[3] FERNUNIVGESAMTHSCH HAGEN,W-5800 HAGEN 1,GERMANY

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1990年 / 115卷 / 1-3期

关键词：

NITROGEN IMPLANTATION PROFILES; IRON; NICKEL AND STEEL; HIGH ENERGY; HIGH FLUENCE; DIFFUSION; RBS AND NDP;

D O I：

10.1080/10420159008220560

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

1 to 2 MeV nitrogen (N+and N2 +) ions were implanted at high fluences in stainless steel, and their depth distributions were measured subsequently by Rutherford backscattering and thermal neutron depth profiling. The range profiles were broader than theoretically expected. With increasing fluence, deviations from ballistic computer codes increase. These deviations can well be described by the assumption of radiation enhanced diffusion for which a simple analytical model is presented. The thermal mobility shows a different behavior for low, and for high implanted fluences. © 1990, Taylor & Francis Group, LLC. All rights reserved.

引用

页码：121 / 134

页数：14

共 30 条

[1]

[Anonymous], 1958, CONSTITUTION BINARY

[2]

Benjamin J. D., 1976, Applications of ion beams to materials 1975, P141

[3]

Biersack J. P., 1973, Radiation Effects, V19, P249, DOI 10.1080/00337577308232256

[4] A MONTE-CARLO COMPUTER-PROGRAM FOR THE TRANSPORT OF ENERGETIC IONS IN AMORPHOUS TARGETS [J].

BIERSACK, JP ;

HAGGMARK, LG .

NUCLEAR INSTRUMENTS & METHODS, 1980, 174 (1-2) :257-269

[5] USE OF NEUTRON-INDUCED REACTIONS FOR LIGHT-ELEMENT PROFILING AND LATTICE LOCALIZATION [J].

BIERSACK, JP ;

FINK, D ;

HENKELMANN, R ;

MULLER, K .

NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3) :93-97

[6] NEW PROJECTED RANGE ALGORITHM AS DERIVED FROM TRANSPORT-EQUATIONS [J].

BIERSACK, JP .

ZEITSCHRIFT FUR PHYSIK A-HADRONS AND NUCLEI, 1982, 305 (02) :95-101

[7]

Burenkov A. F., 1980, TABLICY PARAMETROV P

[8]

CATTERJEE P, 1989, THIN SOLID FILMS, V169, P79

[9]

DEARNALLEY G, 1975, NOV P C EL METH MACH, P72

[10] RESULTS OF ION-IMPLANTATION INTO SILICON IN THE 100 MEV RANGE .1. OXYGEN AND BORON IMPLANTATION [J].

FAHRNER, WR ;

HEIDEMANN, K ;

SCHOTTLE, P .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 70 (02) :463-472

← 1 2 3 →