MNOS TRAPS AND TAILORED TRAP DISTRIBUTION GATE DIELECTRIC MNOS

被引：6

作者：

HSIA, Y ^{[1
]}

NGAI, KL ^{[1
]}

机构：

[1] NAVAL RES LAB,WASHINGTON,DC 20375

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷

关键词：

D O I：

10.7567/JJAPS.19S1.245

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：245 / 248

页数：4

共 17 条

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[2] CHARGE-DISTRIBUTIONS IN SILICON-NITRIDE OF MNOS DEVICES [J].

ENDO, N .

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[3]

GOODMAN AM, 1970, RCA REV, P343

[4] HIGH-TEMPERATURE ANNEALING OF MNOS DEVICES AND ITS EFFECT ON SI-NITRIDE STRESS, INTERFACE CHARGE-DENSITY AND MEMORY PROPERTIES [J].

HEZEL, R .

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[5]

HSIA Y, 1978, IEEE T ELECTRON DEV, V25, P1071

[6]

HSIA Y, 1978, 36TH ANN DEV RES C S

[7] NEGATIVE BIAS STRESS OF MOS DEVICES AT HIGH ELECTRIC-FIELDS AND DEGRADATION OF MNOS DEVICES [J].

JEPPSON, KO ;

SVENSSON, CM .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) :2004-2014

[8] SIMPLE TECHNIQUE FOR DETERMINATION OF CENTROID OF NITRIDE CHARGE IN MNOS STRUCTURES [J].

MAES, H ;

VANOVERSTRAETEN, RJ .

APPLIED PHYSICS LETTERS, 1975, 27 (05) :282-284

[9] ENDURANCE AND MEMORY DECAY OF MNOS DEVICES [J].

NEUGEBAUER, CA ;

BURGESS, JF .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :3182-3191

[10]

NGAI KL, 1979, J VAC SCI TECHNO JUL

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