MOCVD GROWTH OF CUINSE2 - 1ST RESULTS

被引：20

作者：

SAGNES, B

SALESSE, A

ARTAUD, MC

DUCHEMIN, S

BOUGNOT, J

BOUGNOT, G

机构：

[1] Centre d'Electronique de Montpellier (URA 391 du CNRS), Université Montpellier II Sciences et Techniques de Languedoc., F-34095 Montpellier Cédex 05, Place E. Bataillon

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 124卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90527-P

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this paper, we present the different ways by which we tried to grow CuInSe2 (CIS) films in order to work at relatively low source temperature (< 80-degrees-C), with an acceptable vapor pressure and without oxygen in the layer, in the aim to realize homojunction solar cells. Some characterizations achieved on the different compounds obtained, and some studies on the copper deposition from (hfa)2Cu complexed with trimethylamine are also investigated.

引用

页码：620 / 627

页数：8

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