GROWTH OF CRYSTALS FROM GAS-PHASE .4. GROWTH OF GALLIUM-ARSENIDE BY CHEMICAL VAPOR TRANSPORT, AND INFLUENCE OF COMPOSITIONAL CONVECTION

被引：4

作者：

FAKTOR, MM ^{[1
]}

GARRETT, I ^{[1
]}

MOSS, RH ^{[1
]}

机构：

[1] UNIV LONDON,PO RES DEPT,BROOK RD,DOLLIS HILL,LONDON NW2 7DT,ENGLAND

来源：

JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS I | 1973年 / 69卷 / 11期

关键词：

D O I：

10.1039/f19736901915

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：1915 / &

共 16 条

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[6] GROWTH OF CRYSTALS FROM GAS PHASE .1. DIFFUSIONAL LIMITATIONS AND INTERFACIAL STABILITY IN CRYSTAL GROWTH BY DISSOCIATIVE SUBLIMATION [J].

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[7] INTERPLAY OF ACTIVATION AND DIFFUSION IN CRYSTAL GROWTH FROM VAPOUR PHASE [J].

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[8] GROWTH OF CRYSTALS FROM GAS PHASE .3. DIFFUSIONAL LIMITATIONS AND INTERFACE STABILITY IN CRYSTAL GROWTH BY CHEMICAL VAPOUR TRANSPORT [J].

FAKTOR, MM ;

GARRETT, I .

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[9] GROWTH OF CRYSTALS FROM GAS PHASE .2. DIFFUSIONAL LIMITATIONS AND INTERFACIAL STABILITY IN CRYSTAL GROWTH BY DISSOCIATIVE SUBLIMATION, WITH AN INERT THIRD GAS PRESENT [J].

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JOURNAL OF THE CHEMICAL SOCIETY A -INORGANIC PHYSICAL THEORETICAL, 1971, (01) :1-&

[10] REACTION EQUILIBRIA IN GROWTH OF GAAS AND GAP BY CHLORIDE TRANSPORT PROCESS [J].

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