DIRECT MEASUREMENT OF SURFACE CHARGING DURING PLASMA-ETCHING

被引：14

作者：

MURAKAWA, S ^{[1
]}

MCVITTIE, JP ^{[1
]}

机构：

[1] STANFORD UNIV,CTR INTEGRATED SYST,STANFORD,CA 94305

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 7B期

关键词：

PLASMA ETCHING; PROFILE DISTORTION; SURFACE CHARGING; PLASMA NONUNIFORMITY; CHARGING VOLTAGE; SURFACE POTENTIAL PROBE; DEVICE DAMAGE;

D O I：

10.1143/JJAP.33.4446

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An on-wafer surface potential probe was developed for the direct real-time measurement of the local charging on a wafer surface during plasma etching. Pressure and rf power dependencies of the surface charging potential were measured in a nonuniform magnetron plasma by this probe. The variation in etching profiles was also observed by scanning electron microscopy (SEM). The measured surface charging potential was consistent with previously expected values from the profile distortion and device damage results. The local surface charging and the profile distortion increased as the pressure was reduced, while they were insensitive to the rf power change.

引用

页码：4446 / 4449

页数：4

共 9 条

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