VAPOR PHASE GROWTH AND PROPERTIES OF ALUMINUM PHOSPHIDE

被引：15

作者：

RICHMAN, D

机构：

来源：

关键词：

D O I：

10.1149/1.2411483

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：945 / &

共 8 条

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ADDAMIANO, A
[J]. ACTA CRYSTALLOGRAPHICA, 1960, 13 (06): : 505 - 505
[2] UBER DAS AIP - DARSTELLUNG, ELEKTRISCHE UND OPTISCHE EIGENSCHAFTEN
GRIMMEISS, HG
KISCHIO, W
RABENAU, A
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (3-4) : 302 - 309
[3] HANNAY, 1959, SEMICONDUCTORS ED, P417
[4] RABENAU A, 1962, COMPOUND SEMICONDUCT, V1
[5] VAPOR GROWTH OF AIP SINGLE CRYSTALS
REID, FJ
MILLER, SE
GOERING, HL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (05) : 467 - &
[6] DISSOCIATION PRESSURES OF GAAS, GAP AND INP AND NATURE OF III-V MELTS
RICHMAN, D
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (09) : 1131 - &
[7] PREPARATION AND PROPERTIES OF ALUMINUM PHOSPHIDE
WANG, CC
ZAHEERUDDIN, M
SPINAR, LH
[J]. JOURNAL OF INORGANIC & NUCLEAR CHEMISTRY, 1963, 25 (03): : 326 - 327
[8] WILLARDSON RK, 1962, COMPOUND SEMICOND ED, V1