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DOPING PROPERTIES OF GE ON GAAS (100) GROWN BY MBE

被引：30
作者：
KAWANAKA, M
SONE, J
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(89)90433-8
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：421 / 424
页数：4
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[3]   DIFFUSION OF AS AND GE DURING GROWTH OF GAAS ON GE SUBSTRATE BY MOLECULAR-BEAM EPITAXY - ITS EFFECT ON THE DEVICE ELECTRICAL CHARACTERISTICS [J].
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[4]   NUCLEATION AND GROWTH OF GAAS ON GE AND THE STRUCTURE OF ANTIPHASE BOUNDARIES [J].
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