ONSETS OF THE ELECTRON-HOLE-DROPLET LUMINESCENCE IN SI

被引：18

作者：

HAMMOND, RB

SILVER, RN

机构：

[1] Electronics and Theoretical Division, Los Alamos Scientific Laboratory, Los Alamos

来源：

PHYSICAL REVIEW LETTERS | 1979年 / 42卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.42.523

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report measurements of the laser excitation thresholds for the onset of electron-hole-droplet luminescence in Si in the temperature range 2.5-19.3 K. The results are consistent with finite-lifetime nucleation theory. Fits to the data determine a surface tension 1.1×10-2 erg/cm2 and a sticking fraction 5%. © 1979 The American Physical Society.

引用

页码：523 / 526

页数：4

共 19 条

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[5] INVESTIGATIONS OF CONDENSATION PHENOMENA OF ELECTRON-HOLE DROPS IN PURE GE
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[6] TEMPERATURE-DEPENDENCE OF ELECTRON-HOLE-LIQUID LUMINESCENCE IN SI
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[7] HAMMOND RF, UNPUBLISHED
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