CHEMISORPTION GEOMETRY ON CLEAVED III-V SURFACES - CL ON GAAS, GASB, AND INSB

被引:64
作者
MARGARITONDO, G
ROWE, JE
BERTONI, CM
CALANDRA, C
MANGHI, F
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
[2] UNIV MODENA,IST FIS,I-41100 MODENA,ITALY
来源
PHYSICAL REVIEW B | 1979年 / 20卷 / 04期
关键词
D O I
10.1103/PhysRevB.20.1538
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Experimental angle-integrated photoemission curves taken on Cl-covered (110) surfaces of GaAs, GaSb, and InSb have been compared to tight-binding calculations of the local density of states. The results clearly demonstrate that the Cl adatoms are bound to the anion substrate atoms rather than to the cation substrate atoms. Some qualitative information is also provided on surface relaxation and on chemisorption bond lengths. © 1979 The American Physical Society.
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页码:1538 / 1545
页数:8
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