METAL ORGANIC MOLECULAR-BEAM EPITAXY OF GAAS AND GA0.5IN0.5P

被引：8

作者：

MAUREL, P

BOVE, P

GARCIA, JC

GRATTEPAIN, C

机构：

[1] Lab. Central de Recherches, Thomson CSF, Orsay

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 04期

关键词：

D O I：

10.1088/0268-1242/6/4/005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-quality GaAs/Ga0.5In0.5P heterostructures have been grown by metal-organic molecular beam epitaxy, using both triethylgallium and trimethylindium as group III element sources and arsine and phosphine as group V element sources. Both hydride and hydrogen flow rates have been found to have a significant effect on the growth rate of the layers. GaAs bulk layers show p-type conductivity with carbon as a residual impurity. Minimum carbon incorporation is found at around 500-degrees-C. The purity of the epilayers is also sensitive to the purity of the organometallic starting material. Ga0.5In0.5P bulk layers show optimum structural properties at a growth temperature of 520-degrees-C. Full width at half maximum of GaInP (400) reflection peaks as low as 15" have been found. GaAs/Ga0.5In0.5P multiquantum well structures with wells as thin as 10 angstrom and confinement energy exceeding 300 meV have also been grown.

引用

页码：254 / 260

页数：7

共 25 条

[1] Tsang WT, Schubert EF, Chiu TH, Cunningham JE, Burkhard EG, Ditzenberger JA, Agyekum E, Appl. Phys. Lett., 51, 10, (1987)
[2] Tsang WT, Schubert EF, Appl. Phys. Lett., 49, 4, (1986)
[3] Veuhoff E, Pletschen W, Balk P, Luth H, J. Cryst. Growth, 55, 1, (1981)
[4] Vodjdani N, Lemarchand A, Paradan H, J. Physique Coll., 43, 100-105, (1982)
[5] Putz, Heinecke H, Heyen M, Balk P, Weyers M, Luth H, A comparative study of Ga(CH3)3 and Ga(C2H5)3 in the mombe of GaAs, Journal of Crystal Growth, 74, 2, (1986)
[6] Saito K, Tokumitsu E, Akatsuka T, Miyauchi M, Yamada T, Kanagai M, Takahashi K, J. Appl. Phys., 64, 8, (1988)
[7] Abernathy CR, Pearton SJ, Caruso R, Reu F, Kovalchik J, Appl. Phys. Lett., 55, 17, (1989)
[8] Chiu TH, Tsang WT, Schubert EF, Agyekum E, Appl. Phys. Lett., 51, 14, (1987)
[9] Benchimol JL, Alexandre F, Gao Y, Alaoui F, J. Cryst. Growth, 95, (1989)
[10] Ando H, Kondo K, Hishikawa H, Sasa S, Inata T, Hiyamizu S, Selectively Doped GaAs/N-Al0.3Ga0.7As Heterostructures Grown by Gas-Source MBE, Japanese Journal of Applied Physics, 27, (1988)

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