METAL PRECIPITATES IN SILICON P-N JUNCTIONS

[1] QUENCHED-IN RECOMBINATION CENTERS IN SILICON [J]. PHYSICAL REVIEW, 1956, 103 (03): : 567 - 569

[2] COPPER PRECIPITATION ON DISLOCATIONS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (10) : 1193 - 1195

[3] GOETZBERGER A, 1959, B AM PHYS SOC, V4, P409

[4] GOETZBERGER A, 1959, STRUCTURE PROPERTIES, P298

[5] GOETZBERGER A, 1960, B AM PHYS SOC, V5, P160

[6] HUGHES HE, 1957, IRE WESCON CONVENTIO, P80

[7] PELL EM, 1956, J APPL PHYS, V28, P459

[8] PLUMMER AR, 1958, J ELECTRON CONTR, V5, P405

[9] DIFFUSION IN HOMOOPOLAREN HALBLEITERN [J]. ERGEBNISSE DER EXAKTEN NATURWISSENSCHAFTEN, 1959, 31 : 167 - 219

[1] QUENCHED-IN RECOMBINATION CENTERS IN SILICON [J]. PHYSICAL REVIEW, 1956, 103 (03): : 567 - 569

[2] COPPER PRECIPITATION ON DISLOCATIONS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (10) : 1193 - 1195

[3] GOETZBERGER A, 1959, B AM PHYS SOC, V4, P409

[4] GOETZBERGER A, 1959, STRUCTURE PROPERTIES, P298

[5] GOETZBERGER A, 1960, B AM PHYS SOC, V5, P160

[6] HUGHES HE, 1957, IRE WESCON CONVENTIO, P80

[7] PELL EM, 1956, J APPL PHYS, V28, P459

[8] PLUMMER AR, 1958, J ELECTRON CONTR, V5, P405

[9] DIFFUSION IN HOMOOPOLAREN HALBLEITERN [J]. ERGEBNISSE DER EXAKTEN NATURWISSENSCHAFTEN, 1959, 31 : 167 - 219