NEARLY IDEAL ELECTRONIC SURFACES ON NAKED IN0.53GA0.47AS QUANTUM WELLS

被引：44

作者：

YABLONOVITCH, E

COX, HM

GMITTER, TJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 12期

关键词：

D O I：

10.1063/1.99226

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1002 / 1004

页数：3

共 17 条

[1] ABSENCE OF FERMI LEVEL PINNING AT METAL-INX GA1-XAS (100) INTERFACES [J].

BRILLSON, LJ ;

SLADE, ML ;

VITURRO, RE ;

KELLY, MK ;

TACHE, N ;

MARGARITONDO, G ;

WOODALL, JM ;

KIRCHNER, PD ;

PETTIT, GD ;

WRIGHT, SL .

APPLIED PHYSICS LETTERS, 1986, 48 (21) :1458-1460

[2] SURFACE QUANTUM-WELLS [J].

COHEN, RM ;

KITAMURA, M ;

FANG, ZM .

APPLIED PHYSICS LETTERS, 1987, 50 (23) :1675-1677

[3] VAPOR LEVITATION EPITAXY - SYSTEM-DESIGN AND PERFORMANCE [J].

COX, HM ;

HUMMEL, SG ;

KERAMIDAS, VG .

JOURNAL OF CRYSTAL GROWTH, 1986, 79 (1-3) :900-908

[4]

HENRY CH, 1983, IEEE J QUANTUM ELECT, V19, P905, DOI 10.1109/JQE.1983.1071997

[5] QUANTITATIVE COMPARISON OF FERMI LEVEL PINNING AT GAAS/METAL AND GAAS/LIQUID JUNCTIONS [J].

HOROWITZ, G ;

ALLONGUE, P ;

CACHET, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (11) :2563-2569

[6]

HWANG DR, UNPUB

[7] OPTICAL SPECTROSCOPY OF ULTRASMALL STRUCTURES ETCHED FROM QUANTUM-WELLS [J].

KASH, K ;

SCHERER, A ;

WORLOCK, JM ;

CRAIGHEAD, HG ;

TAMARGO, MC .

APPLIED PHYSICS LETTERS, 1986, 49 (16) :1043-1045

[8] MEASUREMENT OF HETEROJUNCTION BAND OFFSETS BY ADMITTANCE SPECTROSCOPY - INP/GA0.47IN0.53AS [J].

LANG, DV ;

PANISH, MB ;

CAPASSO, F ;

ALLAM, J ;

HAMM, RA ;

SERGENT, AM ;

TSANG, WT .

APPLIED PHYSICS LETTERS, 1987, 50 (12) :736-738

[9] REDUCTION OF GAAS SURFACE RECOMBINATION VELOCITY BY CHEMICAL TREATMENT [J].

NELSON, RJ ;

WILLIAMS, JS ;

LEAMY, HJ ;

MILLER, B ;

CASEY, HC ;

PARKINSON, BA ;

HELLER, A .

APPLIED PHYSICS LETTERS, 1980, 36 (01) :76-79

[10] UNPINNED (100) GAAS-SURFACES IN AIR USING PHOTOCHEMISTRY [J].

OFFSEY, SD ;

WOODALL, JM ;

WARREN, AC ;

KIRCHNER, PD ;

CHAPPELL, TI ;

PETTIT, GD .

APPLIED PHYSICS LETTERS, 1986, 48 (07) :475-477

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